Designer's Data for "Worst Case" Conditions. The Designers Data sheets permit the design of most circuits entirely from the in-. Limit curves - representing boundaries on device characteris-. Operating and Storage Junction.

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Lower voltages are also available in the 1N through 1N series 3. The industry-recognized 2. These devices are available in both leaded and surface mount MELF package configurations.

A standard commercial RoHS compliant version is also available with the "e3" suffix. Our website uses cookies including profiling cookies of authorised third parties to give you a better browsing experience, and by continuing to use our site you accept our cookies policy.

Find out more on how we use cookies and how you can change your settings by clicking here. All rights reserved. Microsemi and the Microsemi logo are registered trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. Audio, Voice, and Line Circuits Software. Audio, Voice, and Line Circuits Documents.

MyMicrosemi Partner Portal. PoE Support Cases. PoE Collateral. Storage ICs Documents and Software. Timing ICs Documents. Home Registered Internal Documents Datasheets. Downloads Home. Search Document. Microsemi also offers numerous other Zener products to meet higher and lower power applications. They are especially suitable for use in low distortion switches and attenuators, in HF through S band frequencies.

While both series are electrically equivalent, the UM series have higher power ratings due to a shorter thermal path between the chip and package. High charge storage and long carrier lifetime enable high RF levels to be controlled with relatively low bias current. Similarly, peak RF voltages can be handled well in excess of applied reverse bias voltage.

Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. The GC series diodes are specially processed PIN diodes designed for use in passive or active limiters at frequencies through Ku band.

Thirteen categories of devices are offered for flexibility in design of low, medium and high power limiters. Low VB limiters have thinner I regions for faster turn-on time and better flat leakage. In addition, we manufacture high voltage dual junction limiters for superior peak and CW power handling. This family of 2N thru 2N epitaxial planar transistors are military qualified up to a JANS level for high-reliability applications.

These devices are also available in TO-5 and low profile U4 packaging. The 2EZ3. Other Zener voltage tolerances are also available by changing the suffix number to the tolerance desired such as 1 and 2 for tighter tolerances or 10 for wider tolerance. These plastic encapsulated Zeners are also available in various military equivalent screening levels by adding a prefix identifier as also described in the Features section. They may be operated at high maximum dc currents or full power rating with adequate heat.

This Schottky barrier diode is metallurgically bonded and offers military grade qualifications for high-reliability applications.

This small diode is hermetically sealed and bonded into a DOAA glass package. These units feature a unique on-chip trimming system to set the output voltages to within 1. The SGA versions also offer much improved line and load regulation characteristics. Utilizing an improved Bandgap reference design, problems have been eliminated that are normally associated with the Zener diode references, such as drift in output voltage and large changes in the line and load regulation.

All protective features of thermal shutdown, current limiting, and safe-area control have been designed into these units and since these regulators require only a small output capacitor for satisfactory performance, ease of application is assured. Although designed as fixed-voltage regulators, the output voltage can be increased through the use of a simple voltage divider. The low quiescent drain current of the device insures good regulation when this method is used.

Download View Details. UM UM Datasheet. LDS Datasheet This Schottky barrier diode is metallurgically bonded and offers military grade qualifications for high-reliability applications.





1N3016 DIODES. Datasheet pdf. Equivalent



1N3016 Datasheet


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